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BD241C

Manufacturer:

On Semiconductor

Mfr.Part #:

BD241C

Datasheet:
Description:

BJTs TO-220-3 Through Hole NPN 40 W Collector Base Voltage (VCBO):90 V Collector Emitter Voltage (VCEO):1.2 V Emitter Base Voltage (VEBO):5 V

ParameterValue
Voltage Rating (DC)100 V
Max Operating Temperature150 °C
Min Operating Temperature-65 °C
Number of Pins3
PackagingTube
Lead FreeContains Lead
RoHSCompliant
PolarityNPN
Current Rating3 A
Lifecycle StatusObsolete (Last Updated: 5 months ago)
Max Power Dissipation40 W
Power Dissipation40 W
Max Collector Current3 A
Collector Emitter Breakdown Voltage25 V
Transition Frequency3 MHz
Element ConfigurationSingle
Collector Emitter Voltage (VCEO)1.2 V
Max Breakdown Voltage100 V
Gain Bandwidth Product3 MHz
Collector Base Voltage (VCBO)90 V
Collector Emitter Saturation Voltage1.2 V
Emitter Base Voltage (VEBO)5 V
hFE Min25
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 months ago)
Max Cutoff Collector Current300 µA
Transistor TypeNPN

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